물리
Halliday Physics Chapter 26
Chapter 26. Current and Resistance
이 문서의 목차
1. Electric Current
- Electric Current: 단면을 통과하는 알짜 전하의 이동률\[i = \dfrac{\mathrm dq}{\mathrm dt} \quad [\text{A = C/s}]\]
2. Current Density
- Current Density(\(J\)): 단위 면적당 전류\[J = \dfrac{I}{A}\]
- 비균일한 경우\[I = \iint \mathbf{J} \cdot \mathrm d \mathbf{A} = \iint J \cos \theta\ \mathrm dA\]
- Drift Speed: \(J = nev_{\text{d}}\), \(I = Aev_{\text{d}}n\)
3. Resistance and Resistivity
-
Resistance: 저항값
\[R = \dfrac{V}{I} \quad \text{[$\Omega$ = V/A]}\] -
Resistivity & Conductivity
- Resistivity: \(\rho = \dfrac{E}{J} \quad [\Omega \cdot \text{m}]\)
- Conductivity: \(\sigma = \dfrac{1}{\rho} = \dfrac{J}{E}\)
4. [Derivation] Resistance from Geometry
\(V = EL \Rightarrow E = \dfrac{V}{L}\), \(J = \dfrac{i}{A}\)
\(\rho = \dfrac{E}{J} = \dfrac{VA}{Li} = R \left( \dfrac{A}{L} \right) \Rightarrow V = iR\)
5. Ohm's Law
-
Ohm's Law: \(J = \sigma E\), \(E = \rho J\)
-
Ohmic Device & Non-Ohmic Device
- Ohmic Device: \(V = iR\) 성립
- Non-Ohmic Device: \(V = iR\) 성립 X(ex: 반도체)
6. Microscopic View of Ohm's Law
\(F = eE = ma \Rightarrow a = \dfrac{eE}{m}\)
\(v_{\text{d}} = a \tau = \left( \dfrac{eE}{m} \right) \tau\) (\(\tau\): 충돌 사이 평균 시간)
\(J = ne \left( \dfrac{eE}{m} \tau \right) = \left( \dfrac{ne^2 \tau}{m} \right) E = \sigma E\)
Therefore \(\rho = \dfrac{1}{\sigma} = \dfrac{m}{ne^2 \tau} = \text{const.} \Rightarrow\) Ohm's Law 성립
7. Power in Electric Circuit
\(\mathrm dU = \mathrm dq \cdot V \Rightarrow P = \dfrac{\mathrm dU}{\mathrm dt} = \dfrac{\mathrm dq}{\mathrm dt} V = iV \quad \text{[W = J/s]}\)
-
Resistor에서 열에너지 손실(Joule Heating)
\(V = iR\) 대입 \(\Rightarrow P = i^2 R = \dfrac{V^2}{R}\)
8. Semiconductor and Superconductor
- Temperature Coefficient of Resistivity(\(\alpha\)): \(\rho - \rho_0 = \rho_0 \alpha (T - T_0)\)
- 금속에서, \(T\) ↑ \(\Rightarrow\) \(\tau\) ↓ \(\Rightarrow\) \(\rho\) ↑ (\(\alpha > 0\))
- 반도체에서, \(T\) ↑ \(\Rightarrow\) \(n\) ↑ \(\Rightarrow\) \(\rho\) ↓ (\(\alpha < 0\))
- 초전도체: 임계온도 \(T_{\text{c}}\) 이하로 냉각되면 \(\rho = 0\)